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| Datasheet File OCR Text: |
| PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 17,000 PRINCIPAL DEVICE TYPES 2N5109 EPITAXIAL PLANAR 21.7 x 21.7 MILS 8.7 MILS 3.2 MILS Diameter 3.4 x 3.4 MILS Al - 10,000A Au - 10,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (23- September 2005) |
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